dhg 10 i 1200pm advanced sonic-frd symbol definition r a t i n g s features / advantages: planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch typ. max. i fsm i r a a v 70 i fav a v f 2.69 r thjc 4.00 k/w v r = 1 3 min. 10 ms (50 hz), sine applications: antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) v rrm v 1200 15 t vj v c = t vj c = ma 1.5 package: part number v r = t vj = c i f =a v t c =30c p tot 31 w t c c = a i rm 8.5 /dt i f =a; v r =v a t rr e a s tbd mj t vj c = i a s =a;l = h i a r a v a = tbd f = 10 khz 1.5v r typ.; t vj 150 c -55 high performance fast recovery diode low loss and soft recovery single diode v i t rrm fav rr = = = 1200 10 75 10 t vj =45c 10 -di f = 350 a/s 800 tbd 100 dhg 10 i 1200pm v a ns 1200 v 1200 25 25 25 t p =10 25 max. repetitive reverse voltage reverse current forward voltage average forward current thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current max. reverse recovery current non-repetitive avalanche energy repetitive avalanche current reverse recovery time conditions unit 3.56 t vj c = 25 c j tbd pf j unction capacitance v r =v; 600 t vj 125 v f0 v 1.60 t vj = 150 c r f 73.6 f = 1 mhz =c 25 m to-220fpac v 2.38 t vj =c i f =a v 10 125 3.33 i f =a 20 i f =a 20 ns 75 ns industry standard outline plastic overmolded tab for electrical isolation epoxy meets ul 94v-0 rohs compliant t vj c =25 t vj c = 125 t vj c =25 t vj c = 125 rectangular, d = 0.5 threshold voltage slope resistance for power loss calculation only backside: isolated ixys reserves the right to change limits, conditions and dimensions. ? 2006 ixys all rights reserved 0629 * data according to iec 60747and per diode unless otherwise specified
dhg 10 i 1200pm advanced i rms a per pin* 35 r thch k/w 0.50 m d nm 0.6 mounting torque 0.4 t st g c 150 storage temperature -55 weight g 2 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit * irms is typically limited by: 1. pin-to-chip resi stance; or by 2. current capability of the chip. in case of 1, a common cathode/anode configuration and a no n-isolated backside, the whole cu rrent capability can be used by c onnecting the backside. outlines to-220fpac f c n 60 mounting force with clip 20 ixys reserves the right to change limits, conditions and dimensions. ? 2006 ixys all rights reserved 0629 * data according to iec 60747and per diode unless otherwise specified
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